5812751P26 (Microcircuit Memory) by Bae Systems Information And - Request a Quote Now

Part No. : 5812751P26 Manufacturer : Bae Systems Information And CAGE Code : 94117
Item Name : Microcircuit Memory FSC : 5962 Microcircuits Electronic NSN : 5962-01-254-6223

You can send a request for quote for p/n 5812751P26 to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Bae Systems Information And (CAGE Code 94117). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962012546223. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with 5812751P26 part requirements.

Required fields compulsory *

Contact Information

Note: We will not share your information to any third parties.

  * By clicking this box, I acknowledge that I have read and accept the ASAP Semiconductor Terms & Conditions and agree that all quotes and purchase orders are exclusively subject to the ASAP Semiconductor Terms and Conditions.

  • I consent to receive email communications from ASAP Semiconductor and can unsubscribe at any time.
  • ASAP Semiconductor is a wholly independent aftermarket parts distributor.
  • This website is intended for quotations based on part numbers only. Please DO NOT submit drawings, technical data, or other specifications through this portal.

NSN Information for Part Number 5812751P26 with NSN 5962-01-254-6223, 5962012546223

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-254-6223

Item Description:

Microcircuit Memory

59620125462230NB
CIICHCCESDPMICCriticalityENAC
UBG0
Part NumberISCRNVCRNCCHCCMSDSSADC
5812751p26523

Characteristics Data of NSN 5962-01-254-6223, 5962012546223

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 840 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 140 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDSCHOTTKY AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND HIGH IMPEDANCE
MEMORYCQSJINCLOSURE MATERIALCERAMIC AND GLASS
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN10 INPUT
MEMORYCRHLBIT QUANTITY2048
MEMORYCSWJWORD QUANTITY512
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEPROM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
ASAP Semiconductor's Certifications and Memberships