Part No. : 202515-001 | Alternate P/N : 202515001 | Manufacturer : Bae Systems Information And |
CAGE Code : 81413 | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
NSN : 5962-01-168-5838 |
You can send a request for quote for p/n 202515-001 to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Bae Systems Information And (CAGE Code 81413). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962011685838. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with 202515-001 part requirements.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-168-5838 Item Description: Microcircuit Memory | 5962 | 011685838 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
202515-001 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC" |
CQSJ | INCLOSURE MATERIAL | CERAMIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
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