Part No. : 331233-4 | Alternate P/N : 3312334 | Manufacturer : Bae Systems Information And |
CAGE Code : 80249 | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
NSN : 5962-01-185-9619 |
You can send a request for quote for p/n 331233-4 to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Bae Systems Information And (CAGE Code 80249). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962011859619. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with 331233-4 part requirements.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-185-9619 Item Description: Microcircuit Memory | 5962 | 011859619 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
331233-4 | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.210 INCHES NOMINAL" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | RADAR SYSTEM AN/FPS-117" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT" |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
CZZZ | MEMORY CAPACITY | UNKNOWN" |
TTQY | TERMINAL TYPE AND QUANTITY | 5 PRINTED CIRCUIT" |
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.210 INCHES NOMINAL" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | RADAR SYSTEM AN/FPS-117" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT" |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
CZZZ | MEMORY CAPACITY | UNKNOWN" |
TTQY | TERMINAL TYPE AND QUANTITY | 5 PRINTED CIRCUIT" |
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