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| Part No. : 242829-015 | Alternate P/N : 242829015 | Manufacturer : Bae Systems Information And |
| CAGE Code : 81413 | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
| NSN : 5962-01-189-7758 |
You can send a request for quote for p/n 242829-015 to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Bae Systems Information And (CAGE Code 81413). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962011897758. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with 242829-015 part requirements.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-189-7758 Item Description: Microcircuit Memory | 5962 | 011897758 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 242829-015 | 2 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| CZZZ | MEMORY CAPACITY | UNKNOWN" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
| ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| CZZZ | MEMORY CAPACITY | UNKNOWN" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
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