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| Part No. : CY6116-55LMB | Alternate P/N : CY611655LMB | Manufacturer : Cypress Semiconductor Corporation |
| CAGE Code : 65786 | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
| NSN : 5962-01-302-0502 |
You can send a request for quote for p/n CY6116-55LMB to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Cypress Semiconductor Corporation (CAGE Code 65786). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962013020502. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with CY6116-55LMB part requirements.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-302-0502 Item Description: Microcircuit Memory | 5962 | 013020502 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Cy6116-55lmb | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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