Part No. : CY7C335-83WMB | Alternate P/N : CY7C33583WMB | Manufacturer : Cypress Semiconductor Corporation |
CAGE Code : 65786 | Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
NSN : 5962-01-468-5930 |
You can send a request for quote for p/n CY7C335-83WMB to ASAP Semiconductor using justpartsunlimited.com. This part is manufactured by Cypress Semiconductor Corporation (CAGE Code 65786). The description of it is Microcircuit Memory. The national stock number associated with this part is NSN 5962014685930. This part belongs to FSC Microcircuits Electronic part family. An associate from ASAP Semiconductor will respond within 15 minutes to your query. It is our pleasure to help you with CY7C335-83WMB part requirements.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-468-5930 Item Description: Microcircuit Memory | 5962 | 014685930 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Cy7c335-83wmb | 5 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZER | MEMORY DEVICE TYPE | EPROM" |
FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS" |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT" |
CZER | MEMORY DEVICE TYPE | EPROM" |
FEAT | SPECIAL FEATURES | GENERIC P/N 7C335, CIRCUIT FUNCTION-12 MACROCELL EPLD, FMAX3-83 MHZ, DATA RETENTION-10 YEARS MINIMUM, ENDURANCE-25 ERASE/WRITE CYCLES MINIMUM" |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT" |
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