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For competitive procurement options on part number PLDC20RA10-35DMB from Cypress Semiconductor Inc (CAGE Code 65786), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.
Part Number PLDC20RA10-35DMB Details:
Part number PLDC20RA10-35DMB is manufactured by Cypress Semiconductor Inc and listed with the item name Microcircuit Memory. Classified under NSN 5962-01-373-5795, the NIIN of this item is 013735795, its INC is 41015, and its NCB code is 01 (USA).
For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5962 Microcircuits Electronic. These details are important for confirming parts before making a purchase.
Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.
How to Get Started on Procurement
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-373-5795 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013735795 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-90555 | 5 | 1 | 4 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F16AIRCOMBFIT E/I FSCM 81755" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -16.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | ONE TIME ASYNCHRONOUS PROGRAMMABLE" |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-90555 GOVERNMENT STANDARD" |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 01 TYPE AND L CASE AND A FINISH" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| AGAV | END ITEM IDENTIFICATION | F16AIRCOMBFIT E/I FSCM 81755" |
| CBBL | FEATURES PROVIDED | ASYNCHRONOUS AND MONOLITHIC AND PROGRAMMABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 20 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -16.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS,ONE TIME PROGRAMMABLE,ASYNCHRONOUS,PALD,MONOLITHIC SILICON" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED" |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS NOMINAL ACCESS" |
| CZER | MEMORY DEVICE TYPE | PAL" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | ONE TIME ASYNCHRONOUS PROGRAMMABLE" |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-90555 GOVERNMENT STANDARD" |
| ZZZT | NONDEFINITIVE SPEC/STD DATA | 01 TYPE AND L CASE AND A FINISH" |
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