WS57C45-35KMB Part by E2v Inc with NSN 5962-01-381-5201 - Request a Quote Now

Part Number:  WS57C45-35KMB
Manufacturer:  e2v inc
CAGE Code:  0C7V7
NIIN:  013815201
Item Name :  microcircuit memory
INC Code:  41015
Country:  USA
NCB Code:  01

For competitive procurement options on part number WS57C45-35KMB from E2v Inc (CAGE Code 0C7V7), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.

Part Number WS57C45-35KMB Details:

Part number WS57C45-35KMB is manufactured by E2v Inc and listed with the item name Microcircuit Memory. Classified under NSN 5962-01-381-5201, the NIIN of this item is 013815201, its INC is 41015, and its NCB code is 01 (USA).

For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5962 Microcircuits Electronic. These details are important for confirming parts before making a purchase.

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

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NSN Information for Part Number WS57C45-35KMB with NSN 5962-01-381-5201, 5962013815201

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-381-5201

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620138152010ND
CIICHCCESDPMICCriticalityENAC
UDA0
Part NumberISCRNVCRNCCHCCMSDSSADC
5962-88735514

Characteristics Data of NSN 5962-01-381-5201, 5962013815201

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDPROGRAMMABLE AND TESTED TO MIL-STD-883
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
CWSGTERMINAL SURFACE TREATMENTSOLDER
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCY2K X 8 REGISTERED PROM
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM APPLIED AND 5.5 VOLTS MAXIMUM APPLIED
CZERMEMORY DEVICE TYPEPROM
CZESHYBRID TECHNOLOGY TYPEMONOLITHIC
FEATSPECIAL FEATURESONE TIME PROGRAMMABLE
TESTTEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT



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