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For competitive procurement options on part number PDM41024L55CB from Paradigm Technology Inc (CAGE Code 0K6N4), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.
Part Number PDM41024L55CB Details:
Part number PDM41024L55CB is manufactured by Paradigm Technology Inc and listed with the item name Microcircuit Memory. Classified under NSN 5962-01-370-8088, the NIIN of this item is 013708088, its INC is 41015, and its NCB code is 01 (USA).
For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5962 Microcircuits Electronic. These details are important for confirming parts before making a purchase.
Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.
How to Get Started on Procurement
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-370-8088 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 013708088 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 10138279 | 5 | 9 | 6 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAT | BODY WIDTH0 580 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | ADAQ | BODY LENGTH1 580 INCHES MINIMUM AND 1 700 INCHES MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ADAU | BODY HEIGHT0 129 INCHES MINIMUM AND 0 230 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN MIL-STD-883 CLASS B |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC OR GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS 128K X 8 STATIC RANDOM ACESS MEMORYSCRAM LOW POWERMONOLITHIC SILICON |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-89598 GOVERNMENT STANDARD |
| MEMORY | ZZZT | NONDEFINITIVE SPECSTD DATA01 TYPE AND M CLASS AND X CASE AND A FINISH |
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