PDM41024S45CEOB Part by Paradigm Technology Inc with NSN 5962-01-371-9050 - Request a Quote Now

Part Number: PDM41024S45CEOB

Manufacturer: paradigm technology inc

NSN: 5962-01-371-9050

CAGE Code: 0K6N4

NIIN: 013719050

Item Name : microcircuit memory

INC Code: 41015

Country: USA

NCB Code: 01

FSG: 59 Electrical and Electronic Equipment Components

FSC: 5962 Microcircuits Electronic

For competitive procurement options on part number PDM41024S45CEOB from Paradigm Technology Inc (CAGE Code 0K6N4), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.

Part Number PDM41024S45CEOB Details:

Part number PDM41024S45CEOB is manufactured by Paradigm Technology Inc and listed with the item name Microcircuit Memory. Classified under NSN 5962-01-371-9050, the NIIN of this item is 013719050, its INC is 41015, and its NCB code is 01 (USA).

For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5962 Microcircuits Electronic. These details are important for confirming parts before making a purchase.

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NSN Information for Part Number PDM41024S45CEOB with NSN 5962-01-371-9050, 5962013719050

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-371-9050 Item PartTypeName: MICROCIRCUIT,MEMORY	5962	013719050	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
5962-89598	5	1	4

Characteristics Data of NSN 5962-01-371-9050, 5962013719050

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 580 INCHES MINIMUM AND 1 700 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 580 INCHES MINIMUM AND 0 605 INCHES MAXIMUM
MEMORY	AGAV	END ITEM IDENTIFICATIONANFPS-108A EI FSCM 99687
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS 128K X 8 STATIC RANDOM ACESS MEMORY SCRAM LOW POWER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY
MEMORY	CZES	HYBRID TECHNOLOGY TYPEMONOLITHIC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA67268-5962-89596 GOVERNMENT STANDARD
MEMORY	ADAU	BODY HEIGHT0 129 INCHES MINIMUM AND 0 230 INCHES MAXIMUM
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDLOW POWER AND MONOLITHIC AND TESTED TO MIL-STD-883
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC45 00 NANOSECONDS NOMINAL ACCESS
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	ZZZT	NONDEFINITIVE SPECSTD DATA27 TYPE AND M CLASS AND X CASE AND A FINISH
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CZER	MEMORY DEVICE TYPERAM