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For competitive procurement options on part number MMBZ20VALT1G from Semiconductor Components Industries (CAGE Code 1MQ07), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.
Part Number MMBZ20VALT1G Details:
Part number MMBZ20VALT1G is manufactured by Semiconductor Components Industries and listed with the item name Semiconductor Devices Unitized. Classified under NSN 5961-01-660-7000, the NIIN of this item is 016607000, its INC is 61962, and its NCB code is 01 (USA).
For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5961 Semiconductor Devices and Associated Hardware. These details are important for confirming parts before making a purchase.
Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx . All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.
How to Get Started on Procurement
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-660-7000 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 016607000 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| MMBZ20VALT1G | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| AXGY | Mounting Method | TERMINAL |
| CTQX | Current Rating Per Characteristic | 1.4 AMPERES MAXIMUM REVERSE CURRENT, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| AFZC | Function For Which Designed | TRANSIENT SUPPRESSOR AND ZENER DIODE |
| ABKW | Overall Height | 0.039 INCHES NOMINAL |
| TTQY | Terminal Type And Quantity | 3 PRINTED CIRCUIT |
| CTMZ | Semiconductor Material | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | Power Rating Per Characteristic | 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| MRC | Decoded Requirement | Clear Text Reply |
| ABHP | Overall Length | 0.114 INCHES NOMINAL |
| ABBH | Inclosure Material | PLASTIC |
| ABMK | Overall Width | 0.094 INCHES NOMINAL |
| ASKA | Component Name And Quantity | 2 SEMICONDUCTOR DEVICE PHOTO |
| CTMZ | Semiconductor Material | SILICON 1ST SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | Voltage Rating In Volts Per Characteristic | 17.0 NOMINAL REVERSE VOLTAGE, PEAK AND 20.0 NOMINAL BREAKDOWN VOLTAGE, DC 1ST SEMICONDUCTOR DEVICE DIODE |
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