352-1090-240 Part by Synergetic Technologies Group Inc with NSN 5961-01-080-1220 - Request a Quote Now

Part Number: 352-1090-240

Manufacturer: synergetic technologies group inc

NSN: 5961-01-080-1220

CAGE Code: 1BAM3

NIIN: 010801220

Item Name : semiconductor device set

INC Code: 20590

Country: USA

NCB Code: 01

FSG: 59 Electrical and Electronic Equipment Components

FSC: 5961 Semiconductor Devices and Associated Hardware

For competitive procurement options on part number 352-1090-240 from Synergetic Technologies Group Inc (CAGE Code 1BAM3), look no further than Just Parts Unlimited. With the form presented on this page, you can submit information on your needs to receive tailored procurement solutions from our staff.

Part Number 352-1090-240 Details:

Part number 352-1090-240 is manufactured by Synergetic Technologies Group Inc and listed with the item name Semiconductor Device Set. Classified under NSN 5961-01-080-1220, the NIIN of this item is 010801220, its INC is 20590, and its NCB code is 01 (USA).

For organization and identification purposes, this item is listed within the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Class (FSC) 5961 Semiconductor Devices and Associated Hardware. These details are important for confirming parts before making a purchase.

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NSN Information for Part Number 352-1090-240 with NSN 5961-01-080-1220, 5961010801220

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-080-1220 Item PartTypeName: SEMICONDUCTOR DEVICE SET	5961	010801220	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1468-15	5	2	5

Characteristics Data of NSN 5961-01-080-1220, 5961010801220

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	CERAMIC ALL TRANSISTOR
ABHP	OVERALL LENGTH	0.980 INCHES MAXIMUM ALL TRANSISTOR
ABKW	OVERALL HEIGHT	0.300 INCHES MAXIMUM ALL TRANSISTOR
ABMK	OVERALL WIDTH	0.865 INCHES MAXIMUM ALL TRANSISTOR
AKPV	MOUNTING FACILITY QUANTITY	2 ALL TRANSISTOR
ALAS	INTERNAL CONFIGURATION	JUNCTION CONTACT ALL TRANSISTOR
ASCQ	INTERNAL JUNCTION CONFIGURATION	NPN ALL TRANSISTOR
ASDD	COMPONENT FUNCTION RELATIONSHIP	MATCHED
ASKA	COMPONENT NAME AND QUANTITY	4 TRANSISTOR
AXGY	MOUNTING METHOD	UNTHREADED HOLE ALL TRANSISTOR
CTMZ	SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE,DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 4.0 MAXIMUM EMITTER TO B
CTQX	CURRENT RATING PER CHARACTERISTIC	3.00 AMPERES MAXIMUM BASE CURRENT,DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT,DC ALL TRANSISTOR
CTRD	POWER RATING PER CHARACTERISTIC	140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
FEAT	SPECIAL FEATURES	CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TEST	TEST DATA DOCUMENT	13499-352-1090 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA
TTQY	TERMINAL TYPE AND QUANTITY	6 RIBBON ALL TRANSISTOR